"Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in ..."

Christoph Weimer et al. (2023)

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DOI: 10.1109/BCICTS54660.2023.10310894

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

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Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter:
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS 2023: 249-252

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