Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-kappa gate stacks on germanium.

Thu, 01 Jan 2009 00:00:00 +0100

M. S. Rahman, E. K. Evangelou, I. I. Androulidakis , Athanasios Dimoulas :
Study of stress-induced leakage current (SILC) in HfO₂/Dy₂O₃ high-kappa gate stacks on germanium. Microelectron. Reliab. 49(1): 26-31 (2009)