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ORCID22nd NVMTS 2024: Busan, Republic of Korea
- 22nd Non-Volatile Memory Technology Symposium, NVMTS 2024, Busan, Republic of Korea, October 20-23, 2024. IEEE 2024, ISBN 979-8-3315-3265-9
- J. H. Li, S. F. Sun, W. L. Huang, Q. L. Qu, J. Y. Bail, H. Jin, W. Kang, X. Li, H. X. Liu, G. F. Wang, D. M. Zhang, K. H. Cao, Z. H. Wang, H. Zhang, W. S. Zhao:
High Resistance and Low Variation 8Kb SOT-MRAM Compute-in-Memory Array Based on 1T-1R Cell Structure. 1-4 - Nirmal Solanki, Harshvardhan Singh, Sandip Lashkare, Jayatika Sakhuja, Udayan Ganguly:
Impact of Memory Parameters on Sensitivity Margin of Analog-to-Digital Converter Limiting Neural Network Density. 1-5 - David Lehninger, Ayse Sünbül, Kerstin Bernert, Hannes Mähne, Shouzhuo Yang, Thomas Kämpfe, Justine Barbot, Steffen Thiem, Konrad Seidel, Maximilian Lederer:
Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application. 1-5 - S. Mueller, A. Palludo, D. Ferrario, M. Ghazaryan, D. Le Minh, M. Noack, A. Daraghmah, L. Paone, M. Pagliato, J. Ocker, M. Hoffmann, T. Werner, A. Kashir, F. Tassan, T. Schenk:
Ferroelectric Hafnia: A New Age for FRAM has Started. 1-6 - Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Johannes Müller, Sven Beyer, Viktor Havel, Thomas Mikolajick
:
Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors. 1-5 - Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Franz Müller, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Gerald Gerlach:
Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors. 1-5 - Jiaxin Yang, Jilong Liu, Lang Zeng, Yue Zhang, Weisheng Zhao, Deming Zhang:
A Novel Radiation-Hardened Non-volatile Magnetic Latch Circuit. 1-5 - Gaurav R, Ujwal Uttarwar, Shreyas Deshmukh, Jayatika Sakhuja, Kunal Randad, Samarth Agarwal, Akshata Koshti, Anmol Biswas, Udayan Ganguly:
Area Efficient Multi-Memristor Bit Cell Design for Resistive Processing Unit-Based Neural Network Training. 1-5 - Gunjan Yadav, Lucía Pérez Ramírez, Nick Barrett, Jean Coignus, Nicolas Vaxelaire, Laurent Grenouillet, Jean Pascal Rueff, Denis Ceolin:
Polarization-Dependent Oxygen, Vacancy Distribution in Ferroelectric Hf0.5 Zr0.5 O2 Capacitors. 1-6
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