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20th NVMTS 2022: Stanford, CA, USA

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20th Non-Volatile Memory Technology Symposium, NVMTS 2022, Stanford, CA, USA, December 7-9, 2022. IEEE 2022, ISBN 979-8-3503-0109-0
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Md Tashfiq Bin Kashem, Jake Scoggin, Helena Silva, Ali Gokirmak:
Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices. 1-5
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Koji Sakui, Masakazu Kakumu, Nozomu Harada:
Dynamic Flash Memory with Fast Block Refresh. 1-5
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Seung-Yeol Oh, Hojung Jang, Hyunsang Hwang:
Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. 1-5

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