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ORCID19th NVMTS 2019: Durham, NC, USA
- 19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019. IEEE 2019, ISBN 978-1-7281-4431-3
- Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. 1-4 - Dieter Bimberg, Thomas Mikolajick
, Xavier Wallart:
Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail? 1-4 - Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu:
Investigating Dynamic Minor Loop of Ferroelectric Capacitor. 1-4 - Alessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler:
Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. 1-6 - Ryo Tamura, N. Watanabe, Hiroki Koike, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Soshi Sato:
A novel memory test system with an electromagnet for STT-MRAM testing. 1-4 - Alexandre Levisse, Marco Rios, William Andrew Simon, Pierre-Emmanuel Gaillardon, David Atienza:
Functionality Enhanced Memories for Edge-AI Embedded Systems. 1-4 - Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi:
Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method. 1-5 - Nikolaos Papandreou, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Haralampos Pozidis:
Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect. 1-4 - Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. 1-8 - Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb:
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. 1-5
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