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ORCIDNVMTS 2017: Aachen, Germany
- 17th Non-Volatile Memory Technology Symposium, NVMTS 2017, Aachen, Germany, August 30 - Sept. 1, 2017. IEEE 2017, ISBN 978-1-5386-0477-9
- Rana Alhalabi, Gregory di Pendina
, Ioan Lucian Prejbeanu, Etienne Nowak:
High speed and high-area efficiency non-volatile look-up table design based on magnetic tunnel junction. 1-4 - Attilio Belmonte, Ludovic Goux, Jiyong Woo, Umberto Celano, Augusto Redolfi, Sergiu Clima, Gouri Sankar Kar:
Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament. 1-5 - Irem Boybat, Manuel Le Gallo, S. R. Nandakumar, Timoleon Moraitis, Tomas Tuma, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian, Evangelos Eleftheriou:
An efficient synaptic architecture for artificial neural networks. 1-4 - Wenlong Cai, Kaihua Cao, Mengxing Wang, Shouzhong Peng, Jiaqi Zhou, Anni Cao, Boyu Zhang, Lezhi Wang, Yu Zhang, Jiaqi Wei, Xiaobin He, Hushan Cui, Chao Zhao, Weisheng Zhao:
Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM. 1-4 - Barry Fitzgerald, Damien Hogan, Conor Ryan, Joe Sullivan:
Endurance prediction and error Reduction in NAND flash using machine learning. 1-8 - Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola:
Innovative GeS2/Sb2Te3 based phase change memory for low power applications. 1-4 - Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang:
A multiscale modeling approach for the simulation of OxRRAM devices. 1-8 - Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. 1-4 - Francesco Maria Puglisi:
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories. 1-5 - Shalini Shrivastava, Udayan Ganguly:
Array programming scheme to enable improved transient based non-linearity in impact ionization based Si-NIPIN selectors for low power. 1-4 - Wilhelm Stehling, Elhameh Abbaspour, Christoph Jungemann, Stephan Menzel:
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode. 1-4 - Hideyuki Sugiyama, Hiroaki Yoda, Katsuhiko Koi, Soichi Oikawa, Buyandalai Altansargai, Tomoaki Inokuchi, Satoshi Shirotori, Mariko Shimizu, Yuichi Kato, Yuichi Ohsawa, Mizue Ishikawa, Ajay Tiwari, Naoharu Shimomura, Yoshiaki Saito, Atsushi Kurobe:
High-speed voltage-control spintronics memory focused on reduction in write current. 1-5 - Guy Wicker, Boil Pashmakov:
Potential application of time dependent threshold switching in neuromorphic computing. 1-2 - Moritz von Witzleben, Erik Wichmann, Carsten Funck, Karsten Fleck, Rainer Waser, Ulrich Böttger, Thomas Breuer, Stephan Menzel:
Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater. 1-5
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